Experimental estimation of electron–hole pair creation energy in <b><i>?</i></b>-Ga<sub>2</sub>O<sub>3</sub>
نویسندگان
چکیده
The applicability of using Electron Beam Induced Current (EBIC) measurements on Schottky barriers to obtain the mean electron–hole pair creation energy in ?-Ga2O3 is reported. It shown that, when combined with Monte Carlo simulation, this approach yields for Si, GaN, and 4H–SiC a data set consistent empirical expressions proposed earlier literature many different semiconductors. method then applied ?-Ga2O3, where complications related hole trapping material give rise strong gain EBIC have be carefully treated taken into account. When done, formation found 15.6 eV, reasonable agreement values predicted by expressions.
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2021
ISSN: ['1520-8842', '0003-6951', '1077-3118']
DOI: https://doi.org/10.1063/5.0053301